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| PTF 10036 85 Watts, 860-960 MHz GOLDMOSTM Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * * * * * INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Typical Output Power vs. Input Power 100 60 Efficiency (%) 80 Output Pow er 60 40 20 0 0 1 2 3 4 5 6 40 50 Efficiency Output Power (Watts) A-1 VDD = 28 V IDQ = 800 mA Total f = 960 MHz 30 20 10 100 234 36 569 74 4 Input Power (Watts) Package 20240 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total, f = 900 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 800 mA Total, f = 900 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total, f = 900 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W(PEP), IDQ = 800 mA Total, f = 867, 867.1 MHz--all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB h Y Min 11.0 85 50 -- Typ 12.5 90 55 -- Max -- -- -- 3:1 Units dB Watts % -- e 1 PTF 10036 Electrical Characteristics Characteristic Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e (100% Tested--characteristics, conditions and limits shown per side) Min 65 -- 3.0 -- Typ -- -- -- 2.8 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage(1) Gate-Source Voltage(1) Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) (1) Symbol VDSS VGS TJ PD TSTG RqJC Value 65 20 200 250 1.43 -40 to +150 0.7 Unit Vdc Vdc C Watts W/C C C/W per side Typical Performance Broadband Test Fixture Performance 18 60 15 12 Efficiency (%) Gain (dB) 9 6 3 50 40 -30 0 Broadband Test Fixture Performance Efficiency 16 Efficiency (%) 14 12 50 Gain (dB) 10 8 6 4 925 Gain VDD = 28 V IDQ = 800 mA Total POUT = 85 W Return Loss (dB) Gain VDD = 28 V IDQ = 800 mA Total ` POUT = 85 W Return Loss (dB) 935 945 955 40 -30 5 -15 20 10 -25 0 -35 20 -10 10 -15 0 0 -20 860 865 870 875 880 885 890 895 900 Frequency (MHz) Return Loss Frequency (MHz) 2 Return Loss Efficiency 60 e 25 Output Pow er (W) 20 100 80 120 PTF 10036 Intermodulation Distortion vs. Power Output -10 Output Power & Efficiency Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency -20 Gain (dB) IMD (dBc) VDD = 28 V IDQ = 800 mA Total f1 = 880.0 MHz f2 = 880.1 MHz 3rd 5th 15 10 5 0 860 -30 -40 -50 -60 10 G a in (d B ) 60 Efficiency (%) 40 VDD = 28 V IDQ = 800 mA Total 880 900 920 7th 940 20 960 20 30 40 50 60 70 80 90 100 Frequency (MHz) Output Power (Watts-PEP) Output Power vs. Supply Voltage 100 Power Gain vs. Output Power 16 Output Power (Watts) Power Gain (dB) 90 80 70 60 50 20 22 24 26 28 30 32 34 15 14 13 12 11 IDQ = 800 mA IDQ = 400 mA VDD = 28 V f = 960 MHz 10.0 100.0 IDQ = 800 mA Total f = 960 MHz PIN = 4.5 W IDQ = 200 mA 10 1.0 Supply Voltage (Volts) Output Power (Watts) Capacitance vs. Supply Voltage (one side) * 160 140 Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130 0.43 1.25 2.08 2.9 3.71 4.53 Cds & Cgs (pF) 120 100 80 60 40 20 0 0 Cgs VGS = 0 V f = 1 MHz Cds Crss 10 20 30 40 20 18 16 14 12 10 8 6 4 2 0 Voltage normalized to 1.0 V Series show current (A) Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. 3 Crss (pF) PTF 10036 Impedance Data VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total ---> GE N e Z0 = 50 W Z Load - WAVELE NGTHS ERA Z Source TOW AR D D TO R G G S Z Load 0.0 0.1 0.2 0.3 D 960 MHz ARD LOAD THS TOW LE NG 860 MHz 0.1 A VE -- - W Frequency MHz 860 900 960 R Z Source W jX -8.8 -10.0 -10.4 R 3.9 3.2 2.6 2.5 2.0 2.7 Z Load W jX 0.1 0.1 Z Source 860 MHz 0.2 < 960 MHz 0.3 Typical Scattering Parameters (one side only) (VDS = 28 V, ID = 1.5 A) f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S11 Mag 0.913 0.934 0.950 0.962 0.968 0.971 0.974 0.975 0.976 0.976 0.975 0.975 0.972 0.971 0.968 0.968 0.962 0.956 0.945 0.926 0.887 0.803 0.662 0.659 0.803 0.897 0.938 0.963 0.977 S21 Ang -167.7 -171.3 -173.4 -175.0 -176.4 -177.6 -178.6 -179.6 179.4 178.4 177.4 176.6 175.7 174.6 173.3 172.4 171.0 169.6 167.8 165.7 163.0 160.6 164.4 -178.9 -174.8 -177.2 -179.7 178.1 176.3 S12 Ang 62.7 47.4 37.7 29.4 22.8 18.3 13.2 10.4 6.5 3.6 0.9 -1.8 -3.8 -6.0 -8.6 -10.9 -13.6 -17.3 -21.4 -27.7 -36.3 -51.8 -77.1 -109.8 -136.0 -151.8 -161.0 -169.1 -174.6 4 5 5 0.0 -0.6 S22 Ang -21.5 -31.1 -38.4 -43.8 -42.4 -35.6 -30.6 -11.8 7.4 24.6 49.2 58.7 65.0 67.9 66.2 71.8 71.3 69.6 67.1 64.8 57.6 46.6 27.1 -0.2 -16.6 -14.3 13.8 50.8 60.3 Mag 11.706 6.956 4.507 3.257 2.413 1.905 1.555 1.297 1.117 0.978 0.881 0.801 0.750 0.713 0.688 0.677 0.686 0.704 0.750 0.819 0.938 1.128 1.299 1.183 0.856 0.587 0.416 0.315 0.238 Mag 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.002 0.001 0.002 0.002 0.002 0.003 0.004 0.005 0.005 0.006 0.007 0.008 0.009 0.011 0.013 0.014 0.012 0.007 0.004 0.002 0.003 0.003 Mag 0.605 0.725 0.799 0.873 0.887 0.922 0.943 0.943 0.961 0.960 0.960 0.969 0.962 0.967 0.970 0.962 0.965 0.966 0.962 0.961 0.964 0.965 0.981 1.006 1.008 1.004 1.005 0.996 1.000 Ang -126.8 -136.6 -143.5 -148.7 -153.0 -156.1 -158.9 -160.6 -162.6 -164.0 -165.1 -166.6 -167.1 -168.3 -169.0 -169.4 -170.5 -170.8 -171.0 -171.9 -171.6 -171.4 -171.8 -172.1 -173.7 -175.0 -175.1 -176.2 -176.4 0.4 0 .2 0.1 e Test Circuit PTF 10036 Schematic for f = 900 MHz DUT C1-2 C3 C4 C5-6, C9, C12-13, C17 C7, C10 C8, C11, C14, C18 C15, C16, C19, C20 L1. L2 R1, R2, R4, R5 R3, R6 PTF 10036 15 pF, Capacitor ATC 100 B 0.35-3.5 pF, Variable Capacitor 1-9 pF, Variable Capacitor 33 pF, Capacitor ATC 100 B 10 mF, +10 V Electrolytic Capacitor 0.01 mF, Capacitor ATC 100 B 10 mF, +30 V Electrolytic Capacitor 4 Turn, #20 AWG, .120" I.D. 1.0 K, W Resistor 5.1 K, 1/4 W Resistor 50 W, .030 l l2, l21 l3, l20 l4, l19 l5, l6 l7, l10 l8, l9 l11, l12 l13, l14 l15, l16 l17, l18 l1, l22 20 W, .080 l 32 W, .191 l 25 W, .500 l 25 W, .091 l 7 W, .056 l 13.0 W, .017 l 13.0 W, .017 l 7.0 W, .064 l 10.0 W, .029 l 19.0 W, .028 l Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Components Layout (not to scale) 5 PTF 10036 e Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1997 Ericsson Inc. EUS/KR 1301-PTF 10036 Uen Rev. A 02-18-99 6 |
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